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List of Publications

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Silicon induced defect reduction in AlN template layers for epitaxial lateral overgrowth
A. Mogilatenko, A. Knauer, U. Zeimer, C. Hartmann, H. Oppermann, M. Weyers
Journal of Crystal Growth 462 (2017) 18-23

Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs
J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, Ch. Kuhn, J. Rass, N.L. Ploch, T. Wernicke, M. Weyers, M. Kneissl
Journal of Crystal Growth 464 (2017) 185-189

Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N
M. Lapeyrade, S. Alame, J. Glaab, A. Mogilatenko, R.-S. Unger, Ch. Kuhn, T. Wernicke, P. Vogt, A. Knauer, U. Zeimer, S. Einfeldt, M. Weyers, M. Kneissl
submitted to Journal of Applied Physics (2017)

Triangular-shaped sapphire patterning for HVPE grown AlGaN layers
S. Fleischmann, E. Richter, A. Mogilatenko, R.-S. Unger, D. Prasai, M. Weyers, G. Tränkle,
Physica Status Solidi A 214 (2017) 1600751

Influence of AlN buffer layer on subsequently grown AlGaN by HVPE
S. Fleischmann, E. Richter, A. Mogilatenko, M. Weyers, G. Tränkle,
Physica Status Solidi B 254 (2017) 1600696

Cooperation with group Novel Materials at the Institute of Physics at HU Berlin


Superconducting Tin Selenide/Niobium Diselenide Ferecrystals
C. Grosse, M.B. Alemayehu, A. Mogilatenko, O. Chiatti, D.C. Johnson, S.F. Fischer,
accepted for publication in Crystal Research and Technology

Defect distribution and compositional inhomogeneities in Al0.5Ga0.5N layers grown on stepped surfaces
A. Mogilatenko, A. Knauer, U. Zeimer, M. Weyers
Semiconductor Science and Technology 31 (2016) 025007

Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN
A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, M. Weyers
Physica Status Solidi B 253 (2016) 809-813, DOI 10.1002/pssb.201600075

AlN growth on nano-patterned sapphire: A route for cost efficient pseudo substrates for deep UV LEDs
S. Hagedorn, A. Knauer, A. Mogilatenko, E. Richter, M. Weyers
Physica Status Solidi A 213 (2016) 3178-3185

Atomic signatures of local environment from core-level spectroscopy in beta-Ga2O3
C. Cocchi, H. Zschiesche, D. Nabok, A. Mogilatenko, M. Albrecht, Z. Galazka, H. Kirmse, C. Draxl, Ch.T. Koch
Physical Review B 94 (2016) 075147

Cooperation with group Novel Materials at the Institute of Physics at HU Berlin


Superconducting ferecrystals: turbostratically disordered atomic-scale layered (PbSe)1.14(NbSe2)n thin films
C. Grosse, M.B. Alemayehu, M. Falmbigl, A. Mogilatenko, O. Chiatti, D.C. Johnson, S.F. Fischer,
Scientific Reports 6 (2016) 33457

Surface effects on thermoelectric properties of metallic and semiconducting nanowires
D. Kojda, R. Mitdank, S. Weidemann, A. Mogilatenko, Z. Wang, J. Ruhhammer, M. Kröner, W. Töllner, P. Woias, K. Nielsch, S.F. Fischer,
Physica Status Solidi A 213 No. 3 (2016) 557-570

2D layered transport properties from topological insulator Bi2Se3 single crystal and micro flakes
O. Chiatti, C. Riha, D. Lawrenz, M. Busch, S. Dusari, J. Sanchez-Barriga, , L.V. Yashina, S. Valencia, A. ünal, O. Rader, S.F. Fischer,
Scientific Reports 6 (2016) 27483

V-pit to truncated pyramid transition in AlGaN-based heterostructures
A. Mogilatenko, J. Enslin, A. Knauer, F. Mehnke, K. Bellmann, T. Wernicke, M. Weyers, M. Kneissl
Semiconductor Science and Technology 30 (2015) 114010

In-situ observation and characterization of InGaN quantum well decomposition during epitaxial growth of laser diodes
V. Hoffmann, A. Mogilatenko,U. Zeimer, S. Einfeldt, M. Weyers, M. Kneissl
Crystal Research and Technology 50 (2015)499-503

Analysis of HVPE grown AlGaN layers on honeycomb patterned sapphire
S. Fleischmann, A. Mogilatenko, S. Hagedorn, E. Richter, D. Goran, P. Schäfer, U. Zeimer, M. Weyers, G. Tränkle,
Journal of Crystal Growth 414 (2015) 32-37

Spatial inhomogeneities in structural and optical properties of AlxGa1-xN quantum wells induced by surface morphology of AlN/sapphire templates
U. Zeimer, J, Jeschke, A. Mogilatenko, A. Knauer, V. Kueller, V. Hoffmann, Ch. Kuhn, F. Krüger, M. Martens, M. Kneissl, and M. Weyers
Semiconductor Science and Technology 30 (2015) 114008

High power UV-B LEDs with long lifetime
J. Rass, T. Kolbe, N.L. Ploch, T. Wernicke, F. Mehnke, Ch. Kuhn, J. Enslin, M. Guttmann, Ch. Reich, A. Mogilatenko, J. Glaab, Ch. Stoelmacker,
M. Lapeyrade, S. Einfeldt, M. Weyers, M. Kneissl,
Proc. of SPIE Vol. 9363 (2015) 93631K-1, Gallium Nitride Materials and Devices X, edited by Jen-Inn Chyi, Hiroshi Fujioka, Hadis Morkoc

Cooperation with group Novel Materials at the Institute of Physics at HU Berlin


Temperature-Dependent Thermoelectric Properties of Individual Silver Nanowires
D. Kojda, R. Mitdank, M. Handwerg, A. Mogilatenko, Z. Wang, J. Ruhhammer, M. Kröner, P. Woias, S.F. Fischer,
Physical Review B 91 (2015) 024302

Controlled Pore Formation on Mesoporous Single Crystalline Silicon Nanowires: Threshold and Mechanisms
S. Weidemann, M. Kockert, D. Wallacher, M. Ramsteiner, A. Mogilatenko, K. Rademann, S.F. Fischer,
Journal of Nanomaterials 2015 (2015) 672305

Defect analysis in AlGaN layers on AlN templates obtained by epitaxial lateral overgrowth
A. Mogilatenko, V. Küller, A. Knauer, J. Jeschke, U. Zeimer, M. Weyers, G. Tränkle,
Journal of Crystal Growth 402 (2014) 222

Analysis of crystal orientation in AlN layers grown on m-plane sapphire
A. Mogilatenko, H. Kirmse, J. Stellmach, M. Frentrup, F. Mehnke, T. Wernicke, M. Kneissl and M. Weyers,
Journal of Crystal Growth 400 (2014) 54-60

Epitaxial Growth of GaN on LiAlO2 Substrates
A. Mogilatenko, chapter in K.-W. Benz and W. Neumann, "Introduction to Crystal Growth and Characterization",
Wiley-VCH, ISBN-13: 978-3-527-31840-7 (2014) pp. 392-407

Effect of heavy Ga doping on defect structure of SnO2 layers
A. Mogilatenko, H. Kirmse, O. Bierwagen, M. Schmidbauer, M-Y. Tsai, I. Häusler, M.E. White and J.S. Speck,
Physica Status Solidi (a) 211 (2014) 87

Influence of barrier growth schemes on the structural properties and thresholds of InGaN quantum well laser diodes
V. Hoffmann, A. Mogilatenko, C. Netzel, U. Zeimer, S. Einfeldt, M. Weyers, M. Kneissl,
Journal of Crystal Growth 391 (2014) 46

Distributed Feedback Lasers in the 760 nm to 810 nm Range and Epitaxial Grating Design
O. Brox, F. Bugge, A. Mogilatenko, E. Luvsandamdin, A. Wicht, H. Wenzel, E. Goetz,
Semicond. Sci. Technol. 29 (2014) 095018

Small linewidths 76x nm DFB-laser diodes with optimised two-step epitaxial gratings
O. Brox, F. Bugge, A. Mogilatenko, E. Luvsandamdin, A. Wicht, H. Wenzel, G. Erbert,
Proc. SPIE Vol. 9134, Semicoductor Lasers and Laser Dynamics VI (2014) 91340T doi:10.1117/12.2052914

Hydride vapor-phase epitaxy of c-plane AlGaN layers on patterned sapphire substrates
E. Richter, S. Fleischmann, D. Goran, S. Hagedorn, W. John, A. Mogilatenko, D. Prasai, U. Zeimer, M. Weyers, G. Tränkle,
Journal of Electronic Materials 43 (2014) 814

New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery
P. Ivo, E.M. Cho, P. Kotara, L. Schellhase, R. Lossy, U. Zeimer, A. Mogilatenko, J. Wurfl, G. Tränkle, A. Glowacki, C. Boit,
Microelectronics Reliability 54 (2014) 1288-1292

Cooperation with group Novel Materials at the Institute of Physics at HU Berlin


The effect of a distinct diameter variation on the thermoelectric properties of an individual Bi0.39Te0.61 Nanowire
D. Kojda, R. Mitdank, A. Mogilatenko, W. Töllner, Z. Wang, M. Kröner, P. Woias, K. Nielsch, S.F. Fischer,
Semiconductor Science and Technology 29 (2014) 124006

Origin of a-plane (Al,Ga)N formation on patterned c-plane sapphire
A. Mogilatenko,H. Kirmse, S. Hagedorn, E. Richter, U. Zeimer, M. Weyers and G. Tränkle,
Journal of Physics: Conference Series 471 (2013) 012038

Predominant growth of non-polar a-plane (Al,Ga)N on patterned c-plane sapphire by hydrogen vapor phase epitaxy
A. Mogilatenko, S. Hagedorn, E. Richter, U. Zeimer, D. Goran, M. Weyers, G. Tränkle,
Journal of Applied Physics 113 (2013) 093505

Cathodoluminescence and TEM investigations of structural and optical properties of AlGaN grown on ELO AlN/sapphire templates
U. Zeimer, A. Mogilatenko, V. Kueller, A. Knauer, M. Weyers,
Journal of Physics: Conference Series 471 (2013) 012021

Impact of AlN nucleation layer on strain in GaN grown on 4H-SiC Substrates
E. Cho, A. Mogilatenko, F. Brunner, M. Weyers,
Journal of Crystal Growth 371 (2013) 45-49

Stress evolution during AlxGa1-xN/AlN growth on sapphire
F. Brunner, A. Mogilatenko, V. Kueller, A. Knauer, M. Weyers,
Journal of Crystal Growth 376 (2013) 54-58

Electrical properties and microstructure of Vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces
M. Lapeyrade, A. Muhin, S. Einfeldt, U. Zeimer, A. Mogilatenko, M. Weyers, M. Kneissl,
Semiconductor Science and Technology 28 (2013) 125015

High quality AlGaN grown on ELO AlN/sapphire templates
U. Zeimer, V. Kueller, A. Knauer, A. Mogilatenko, M. Weyers, M. Kneissl,
Journal of Crystal Growth 377 (2013) 32-36

In-situ etching of patterned GaAs/Ga0.5InP surfaces for highly efficient 975 nm DFB-BA diode lasers
A. Maaßdorf , C. M. Schultz, O. Brox, H. Wenzel, P. Crump, F. Bugge, A. Mogilatenko, G. Erbert, M. Weyers and G. Tränkle,
Journal of Crystal Growth 370 (2013) 226-229

Cooperation with groups of the Institute of Physics at HU Berlin

Structural features in [(SnSe)1.15]m(TaSe2) ferecrystals – a new type of layered inter- growth compounds
C. Grosse, R. Atkins, H. Kirmse, A. Mogilatenko, W. Neumann, D.C. Johnson
Journal of Alloys and Compounds 579 (2013) 507-515

Highly strained photovoltaic dual-channel intersubband photodetectors grown by gas-source MBE
M. Elagin, P. Schultz, M.P. Semtsiv, M. Elagin, H.Kirmse, A. Mogilatenko, T.W. Masselink,
Journal of Crystal Growth 378 (2013) 607-610

Microstructure analysis of novel ternary NiSi2-xAlx silicide layers on Si(001) formed by solid-state reaction
A. Mogilatenko, G. Beddies, M. Falke, I. Häusler, W. Neumann,
Journal of Applied Physics 111 (2012) 103512

Analysis of doping induced wafer bow during GaN:Si growth on sapphire
F. Brunner, A. Mogilatenko, A. Knauer , M. Weyers , T. Zettler
Journal of Applied Physics 112 (2012) 033503

In-situ etched gratings embedded in AlGaAs for efficient high power 970nm distributed feedback broad-area lasers
C.M. Schultz, P. Crump, A. Maaßdorf, O. Brox, F. Bugge, A. Mogilatenko, H. Wenzel, S. Knigge, B. Sumpf, M. Weyers, G. Erbert and G. Tränkle,
Applied Physics Letters 100 (2012) 201115

Investigation of inversion domain formation in AlN grown on sapphire by MOVPE
V. Küller, A. Knauer, F. Brunner, A. Mogilatenko, M. Kneissl, M. Weyers,
Physica Status Solidi C 9 (2012) 496-498

Modulated epitaxial lateral overgrowth of AlN for efficient UV LEDs
V. Küller, A. Knauer, C. Reich, A. Mogilatenko, M. Weyers, J. Stellmach, T. Wernicke, M. Kneissl, Z. Yang, C. L. Chua, N. M. Johnson,
IEEE Photonics Technology Letters 24 (2012) 1603-1605

Porous nanostructures and thermoelectric power measurement of Electro-Less Etched black silicon
A.G. Yuan, R. Mitdank, A. Mogilatenko, S. F. Fischer,
Journal of Physical Chemistry C 116 (2012) 13767–13773

(Al,Ga)N overgrowth over AlN ridges oriented in [11-20] and [1-100] direction
V. Küller, A. Knauer, U. Zeimer, H. Rodriguez, A. Mogilatenko, M. Kneissl, M. Weyers,
Physica Status Solidi C 8 (2011) 2022-2024

Characterisation and optimization of 2-step MOVPE growth for single-mode DFB or DBR laser diodes
F. Bugge, A. Mogilatenko, U. Zeimer, O. Brox, W. Neumann, G. Erbert, M. Weyers,
Journal of Crystal Growth 315 (2011) 74-77

Bi-modal growth and properties of self-assembled InP/InGaAs-nanowhiskers on (001) InP by gas source MBE
M. Chashnikova, A. Mogilatenko, O. Fedosenko, V. Bryksa, A.Petrov, S. Machulik, M.P. Semtsiv, W. Neumann, T.W. Masselink,
Journal of Crystal Growth 323 (2011) 319-322

Interplay between phase formation mechanisms and magnetism in the Sr2FeMoO6-delta metal-oxide compound
N. Kalanda, S. Demyanov, W. Masselink, A. Mogilatenko, M. Chashnikova, N. Sobolev, O. Fedosenko,
Crystal Research and Technology 46 (2011) 463-469

Advanced microstructure diagnostics and interface analysis of modern materials by high-resolution analytical transmission electron microscopy
W. Neumann, H. Kirmse, I. Häusler, A. Mogilatenko, Ch. Zheng, W. Hetaba,
Bulletin of Polish Academy of Sciences – Technical Sciences 58 (2010) 237-253

Electron beam induced oxygen desorption in -LiAlO2
W. Hetaba, A. Mogilatenko, W. Neumann
Micron 41 (2010) 479-483

Structure investigations of nonpolar GaN layers
W. Neumann, A. Mogilatenko, T. Wernicke, E. Richter, M. Weyers, M. Kneissl
Journal of Microscopy 237 (2010) 308-313

Structural changes in nickel silicide thin films under the presence of Al and Ga
A. Mogilatenko, F. Allenstein, M.A. Schubert, M. Falke, G. Beddies, W. Neumann
Materials Science Forum 638-642 (2010) 2938-2943

Influence of AlN/(Al,Ga)N superlattices on the defect densities in UV-LEDs formed on high-temperature AlN layers on sapphire
A. Mogilatenko, F. Brunner, A. Knauer, V. Kueller, M. Weyers and W. Neumann
Proceedings of Microscopy Conference (MC2009), Verlag der TU Graz, Vol.3 (2009) 23-24, DOI: 10.3217/978-3-85125-062-6-384

Formation of ternary nickel dislicide films with modified lattice parameters: influence of Al and Ga
A. Mogilatenko, F. Allenstein, M.A. Schubert, M. Falke, G. Beddies, W. Neumann
Proceedings of Microscopy Conference (MC2009), Verlag der TU Graz, Vol.3 (2009) 35-36, DOI: 10.3217/978-3-85125-062-6-390

Quantitative structure analysis of nanosized materials by transmission electron microscopy
W. Neumann, H. Kirmse, I. Häusler, Ch. Zheng, A. Mogilatenko
MRS Symp. Proc. “Electron crystallography for materials research and quantitative characterisation of nanostructured materials” Vol. 1184 (2009) 73-84

An ELNES study of LiAlO2
W. Hetaba, A. Mogilatenko, W. Neumann, P. Schattschneider
Proceedings of Microscopy Conference (MC2009), Verlag der TU Graz, Vol. 1 (2009) 125-126, DOI: 10.3217/978-3-85125-062-6-061

Novel hedgehog-like magnetic nanostructures studied by liquid nitrogen free EDS and aberration corrected STEM/EELS
M. Falke, A. Mogilatenko, W. Neumann, C. Brombacher, H. Rohrmann, M. Kratzer, M. Albrecht, A. Bleloch, R. Terborg, R. Krömer, M. Rohde
Proceedings of Microscopy Conference (MC2009), Verlag der TU Graz, Vol.3 (2009) 73-74, DOI: 10.3217/978-3-85125-062-6-409

Liquid nitrogen free energy dispersive x-ray spectroscopy in TEM/STEM using silicon drift detectors
M. Falke, A. Mogilatenko, H. Kirmse, W. Neumann, C. Brombacher, H. Rohrmann, M. Kratzer, M. Albrecht, A. Bleloch, G. Tränkle, R. Terborg, R. Krömer, M. Rohde
Proceedings of Microscopy Conference (MC2009), Verlag der TU Graz, Vol. 1 (2009) 147-148, DOI: 10.3217/978-3-85125-062-6-072

TEM study of c-plane GaN layers grown on LiAlO2(100)
A. Mogilatenko, W. Neumann, E. Richter, M. Weyers, B. Velickov, R. Uecker
Physica Status Solidi (c) 5 (2008) 3712-3715

Influence of Ga on the Growth of NiSi2 on Si
A. Mogilatenko, F. Allenstein, M.A. Schubert, M. Falke, G. Beddies, H.-J. Hinneberg, W. Neumann
Physica Status Solidi (c) 5 (2008) 3752-3755

Defects in m-plane GaN layers grown on (100) -LiAlO2
A. Mogilatenko, W. Neumann, T. Wernicke, E. Richter, M. Weyers, B. Velickov, R. Uecker
Proceedings of 14th European Microscopy Congress (EMC2008), Springer-Verlag Berlin Heidelberg, Vol. 2 (2008) 73-74, DOI: 10.1007/978-3-540-85226-1_37

Effect of the AlN nucleation layer growth on AlN material quality
O. Reentilä, F. Brunner, A. Knauer, A. Mogilatenko, W. Neumann, H. Protzmann, M. Heuken, M. Kneissl, M. Weyers, G. Tränkle
Journal of Crystal Growth 310 (2008) 4932-4934

Computer-assisted analysis of TEM diffraction contrast images of (In,Ga)N/GaN nanostructures
P. Manolaki, I. Häusler, H. Kirmse, A. Mogilatenko, W. Neumann, J. Smałc- Koziorowska, C. Skierbiszewski
Physica Status Solidi (c) 5 (2008) 3732-3735

Effects of the Li-evaporation on the Czochralski growth of -LiAlO2
B. Velickov, A. Mogilatenko, R. Bertram, D. Klimm, R. Uecker, W. Neumann, R. Fornari
Journal of Crystal Growth 310 (2008) 214-220

Diffusion formation of silicide phases in Ni/Si(001) nanodimensional film system
S.I. Sidorenko, Yu. Makogon, S.M. Voloshko, O.P. Pavlova, I.E. Kotenko, A.V. Mogilatenko, G. Beddies,
Defect and Diffusion Forum 280-281 (2008) 9-14

Mechanism of LiAlO2 decomposition during the GaN growth on (100) Y-LiAlO 2
A. Mogilatenko, W. Neumann, E. Richter, M. Weyers, B. Velickov, R. Uecker
Journal of Applied Physics 102 (2007) 023519

Growth of c-plane GaN Films on (100) Y-LiAlO2 by Hydride Vapour Phase Epitaxy
A. Mogilatenko, W. Neumann, E. Richter, M. Weyers, B. Velickov, R. Uecker
Springer Proceedings in Physics 120, Pr oc. 15th Conf. Microscopy of Semiconducting Materials (2007) 45-48

Structural Analysis of c-plane GaN Layers Grown on (100) Y-LiAlO2
A. Mogilatenko, E. Richter, W. Neumann, M. Weyers, B. Velickov, R. Uecker
Microscopy and Microanalysis 13 (Suppl. 3) (2007) 326-327

Axiotaxy of CrSi2 on Si(001); from the Micrometer- to the Angstrom-Scale
M. Falke, H. Schletter, O. Filonenko, A. Mogilatenko, G. Beddies, S. Schulze, M. Hietschold, A. Bleloch, K. De Keyser, C. Detavernier
Microscopy and Microanalysis 13 (Suppl. 3) (2007) 396-397

Solid-state reactions in Ni(10 nm)/C(2 nm)/Si(001) thin film system
Yu.N. Makogon, O.P. Pavlova, G. Beddies A.V. Mogilatenko, O.V. Chukhrai
Defect and Diffusion Forum 264 (2007) 155-158

Influence of annealing environment and the film thickness on the phase formation in the Ti/Si(100) and (Ti+Si)/Si(100) thin film system
Yu. Makogon, O. Pavlova, S. Sidorenko, G. Beddies, A. Mogilatenko
Defect and Diffusion Forum 264 (2007) 159-162

Surfactant Effect of Sb on the Growth of MnSi1.7 Layers on Si(001)
A. Mogilatenko, M. Falke, H. Hortenbach, S. Teichert, G. Beddies, H.-J. Hinneberg,
Applied Surface Science 253 (2006) 561-565

The Interface Structure of Cubic Disilicides with Tuned La ttice Parameter on (001)Si Investigated by Aberra tion Corrected Dedicated STEM
M. Falke, F. Allenstein, A. Mogilatenko, G. Beddies, A. Bleloch,
Proc. of 16th International Micro scopy Congress (IMC16) (2006) Sapporo, Japan

Solid-state reactions in a thin-film Ti(1 0 nm)/Ni(10 nm)/C(2 nm) composition on single-crystal silicon of (001) orientation at annealing in vacuum
Yu.N. Makogon, O.P. Pavlova, G. Beddies, A.V. Mogilatenko, O.V. Chukhrai,
Metallofizika i Noveishi e Tekhnologii 28 (7), pp. 913-921

Passivation of Si(001) by the Surfactant Sb and its Influence on the NiSi2 Growth
A. Mogilatenko, M. Falke, H. Hortenbach, S. Teichert, G. Beddies, H.-J. Hinneberg,
Journal of Crystal Growth 283 (2005) 303-308

Structure and magneto-optic Kerr measurements of epitaxial MnSi films on Si(111)
K. Schwinge, C. Müller, A. Mogilatenko, J. J. Paggel, and P. Fumagalli
Journal of Applied Physics 97 (2005) 103913

Influence of Al on the growth of NiSi2 on Si(001)
F. Allenstein, L. Budzinski, D. Hirsch, A. Mogilatenko, G. Beddies, R. Grötzschel, H.-J. Hinneberg,
Microelectronic Engineering 82 (2005) 474-478

Thermostimulated mass transfer and solid-state reactions inside thin-film system of Ni (24 nm)/Ti (5 nm)/Si(001)
Beddies, G., Voloshko, S.M., Makogon, Y.M., Mogilatenko, H.V., Pavlova, O.P., Sidorenko, S.I., Hinneberg, H.J., Zamulko, S.O., Mishchuk, O.O.
Metallofizika i Noveishi e Tekhnologii 27 (12), pp. 1635-1643

Structure and properties of CrSi2/Si multilayers
D. Decker, E. Loos, K. Drobnievski, A. Mogilatenko, J. Schumann, G. Beddies, H.-J. Hinneberg,
Microelectronic Engineering 76 (2004) 331-335

Influence of ultrathin templates on the epitaxial growth of CrSi2 on Si(001)
O. Filonenko, A. Mogilatenko, H. Hortenbach, F. Allenstein, G. Beddies, H.-J. Hinneberg,
Microelectronic Engineering 76 (2004) 324-330

Epitaxial growth of CrSi2 on Si(001) by template technique
O. Filonenko, A. Mogilatenko, H. Hortenbach, F. Allenstein, G. Beddies, H.-J. Hinneberg,
Journal of Crystal Growth 262 (2004) 281

Transmission Electron Microscopy Study of MnSi1.7 Growth on (001)Si
A. Mogilatenko, M. Falke, S. Teichert, G. Beddies, H.-J. Hinneberg,
Microscopy and Miroanalysis 9 (Suppl.3) (2003) 260-261

Surfactant Mediated Growth of MnSi1.7 Layers on (001)Si
A. Mogilatenko, M. Falke, S. Teichert, H. Hortenbach, G. Beddies, H.-J. Hinneberg,
Microelectronic Engineering Vol. 64/1-4 (2002) 211-218

Electron Microscopic Investigation of MnSi1.7 Layers on Si(001)
A. Mogilatenko, M. Falke, S. Teichert, S. Schwendler, D. K. Sarkar, H.-J. Hinneberg,
Microelectronic Engineering Vol. 60 (2002) 247-254

Epitaxial Silicide Growth on Si(001)
M. Falke, A. Mogilatenko, O. Filonenko, A. Henning, S. Teichert, G. Beddies, H.-J. Hinneberg, C. Humphreys,
ICEM-15 Durban Proceedings 1(2002) 771-772

Growth of MnSi1.7 on Si(001) by MBE
S. Teichert, S. Schwendler, D. K. Sarkar, A. Mogilatenko, M. Falke, G. Beddies, C. Kleint, H.-J. Hinneberg,
Journal of Crystal Growth 227-228 (2001) 882

Preparation and properties of MnSi1.7 on Si(001)
S. Teichert, D. K. Sarkar, S. Schwendler, H. Giesler, A. Mogilatenko, M. Falke, G. Beddies, H.-J. Hinneberg,
Microelectronic Engineering 55 (2001) 227-232

Electron Microscopy Investigations of the Growth of Manganese Silicide Films on Si(001)
A. Mogilatenko, M. Falke, S. Teichert, D. K. Sarkar, H.-J. Hinneberg,
Proc. 12th European Congress on Electron Microscopy EUREM 2000, Brno, Vol. II (2000) 293

 

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