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Field of Research

Major Research Areas

My research interests focus on understanding of structural properties of materials, in particular III-V semiconductors and transition metal silicides, on nanoscale. As a PostDoc at the Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik and a guest scientist in the Structure Research and Electron Microscopy Group at the Institute of Physics of Humboldt-University of Berlin I have a great opportunity to use fundamental academic materials research to influence technological application of these materials in fields of optoelectronics and electronics.

As an associated member of the group Novel Materials at Humboldt University of Berlin I have a unique opportunity to spread my research intersets on novel nanostructured materials, like topological insulators, ferecrystals, etc.

To analyse structural properties on nanoscale I use different techniques of Transmission Electron Microscopy (TEM), which are available in TEM group at the Institute of Physics, Humboldt University of Berlin.

Currently, my major research areas are:

  • Structural analysis of III-nitride-based heterostructures for UV LEDs as well as microwave and power transistors
  • Analysis of nonpolar and semipolar (Al,Ga)N buffer layers

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Next Events

18th Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 8–12 2019, Berlin, Germany

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The 18th conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVII) will be held in Berlin, Germany, September 8-12, 2019. It is organized by Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik and Leibniz Institute for Crystal Growth. For almost 30 years, DRIP has focused on all aspects of defects in semiconductors including point, line, planar and volume defects studied by a variety of tools, emphasizing the role of characterization techniques. This comprehensive approach has allowed for a discussion of the multifaceted effects of growth, processing and device fabrication and their interrelationships, and how to approach the study of defects.

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