Programme



Monday, March 1st

Opening
10.00 W. Neumann, Berlin, Germany
S. Porowski, Warsaw, Poland

Bulk growth
Chair
: R. Fornari

10.20 Bulk GaN substrates for optoelectronic applications - an overview
S. Krukowski, High Pressure Research Centre, Polish Academy of Sciences, Warsaw, Poland
11.00 The challenge of growing GaN from a solution at ambient pressure
E. Meißner, Fraunhofer Institute of Integrated Circuits, Device Technology, Erlangen, Germany
11.40 Applications of hydride vapour phase epitaxy for growth of GaN substrates and layers
B. Luzcnik, High Pressure Research Centre, Polish Academy of Sciences


12.20 Lunch


Blue and UV laser applications
Chair : J. Langer

13.30 Optical properties of (Al,Ga)N alloys: crystal field effects
M. Leroux, CRHEA-CNRS, Valbonne, France
14.10 M-plane (Al,Ga,In)N layers and heterostructures
K.H. Ploog, Paul-Drude-Institut, Berlin, Germany
14.50 Blue and UV lasers on bulk substrates – recent results
P. Perlin, High Pressure Research Centre, PAN, Warsaw, Poland


15.30 Coffee break


Epitaxial growth
Chair : H. Riechert

16.00 Prospects of molecular beam epitaxy for optoelectronic devices
C. Skierbiszewski, High Pressure Research Centre, Polish Academy of Sciences, Warsaw, Poland
16.40 Multiscale simulations of GaN growth and defect formation
J. Neugebauer, Universität Paderborn, Germany

Optical properties
Chair : M. Leroux

17.20 Why some semiconductors prefer radiative recombination-radiative puzzle
J. Langer, Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
18.00 Polaritons in ZnO and GaN
A. Hoffmann, TU Berlin, Institut für Festkörperphysik, Berlin Germany



Tuesday, March 2nd

Infrared emitting nitrides
Chair : K.H. Ploog

9.00 Whats new about InN?
O. Ambacher, TU Ilmenau, Ilmenau, Germany
9.40 Nitride intersubband physics and devices
F. Julien, Universite Paris Sud, Orsay, France


10.20 Coffee break


10.50 Diluted nitrides
H. Riechert, Infineon Central Reserach Photonics, Munich, Germany

Defects
Chair : H.P. Strunk

11.30 Defects in nitrides
J. Weyher, High Pressure Research Centre, Polish Academy of Sciences, Warsaw, Poland


12.00 Lunch


13.00 Electronic structure of shallow impurities in GaN
R. Stepniewski, Institute of Experimental Physics, University of Warsaw, Warsaw; Poland
13.40 Cathodoluminescence and the transport properties of nitride structures
M. Godlewski, Institute of Physics, Polish Academy of Sciences, Warsaw, Poland


14.20 Coffee break


Spintronics
Chair : A. Hoffmann

14.50 Spintronics in nitrides
P. Boguslawski, Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
15.30 Prospects for carrier mediated ferromagnetism in GaN
M. Brandt, Walter Schottky Institut, TU München, Munich, Germany


Short talks and poster presentations
Chair : W. Neumann

16.00 Short talks
17.00 Poster presentations



Wednesday, March 3rd

Sensors
Chair : F. Julien

9.00 Solar blind UV photodetectors
L. Dobrzanski, Institute of Electronic Materials Technology, Warsaw, Poland
9.40 GaN-AlGaN heterostructures for sensor applications
M. Eickhoff, Walter Schottky Institut, TU München, Munich, Germany


10.10 Coffee break


Roundtable discussion
Chair : K. Buschbeck

11.00 Perspectives of German-Polish collaboration in science, education and industry

Dr. A. Volhard, Bundesministerium für Bildung und Forschung
N.N., Deutsche Forschungsgemeinschaft
N.N., Polish Ministry of Science
Prof. S. Porowski, High Pressure Research Centre, Warsaw Poland
13.30 Closing Remarks
H.P. Strunk, Universität Erlangen-Nürnberg, Erlangen, Germany